Abstract
FePd, FePt, and CoPt alloy epitaxial films of 40 nm thickness are prepared on MgO(111) singlecrystal substrates by employing two different methods. One is a one-step method consisting of hightemperature deposition at 600 °C and the other is a two-step method consisting of low-temperature deposition at 200 °C followed by annealing at 600 °C. Although the preparation method is different, similar final crystal structures are realized for all the film materials. FePd and FePt alloy films grow on the substrates with six L 10 (111) variants, whose c -axes are about 35° canted from the substrate surface and rotated around the film normal by 60° each other. The order degrees of FePd and FePt films prepared by one- and two-step methods, (S one-step , S two-step ), are estimated to be (0.25, 0.33) and (0.08, 0.15), respectively. On the contrary, L 10 ordered phase formation is not recognized for CoPt alloy films. The films prepared by one-step method have rough surfaces surrounded by side facets, whereas the films prepared by two-step method have very flat surfaces with the arithmetical mean roughness of 0.3 nm. The two-step method is useful for preparation of L 10 ordered films with flat surface.
Highlights
L10 ordered FePd, FePt, and CoPt alloys show uniaxial magnetocrystalline anisotropy energies greater than 107 erg/cm3 along the c-axis and the thin films have been investigated for magnetic device applications like recording media, etc
The FePd and the FePt films consist of six L10(111) variants whose c-axes are about 35° canted from the substrate surface and rotated around the film normal by 60° each other
FePd, FePt, and CoPt alloy epitaxial films of 40 nm thickness are prepared on MgO(111) substrates by employing two different methods; one-step method consisting of deposition at 600 °C and two-step method consisting of deposition at 200 °C followed by annealing at 600 °C
Summary
L10 ordered FePd, FePt, and CoPt alloys show uniaxial magnetocrystalline anisotropy energies greater than 107 erg/cm along the c-axis and the thin films have been investigated for magnetic device applications like recording media, etc. The control of c-axis distribution is required for fabrication of magnetic film devices. In order to investigate the L10 crystal distribution, a welldefined epitaxial film is useful, since the crystallographic orientation can be controlled by single-crystal substrate. FePd [1,2,3,4], FePt [1, 5,6,7,8], and CoPt [1, 9,10,11,12] epitaxial films have been prepared on MgO substrates of (001), (110), and (111) orientations. Most of the films have been prepared by employing elevated substrate temperatures around 600 °C
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