Abstract

The methods of femtosecond optical spectroscopy have been used to study the ultrafast electronic processes in undoped alloys of amorphous hydrogenated silicon prepared by rf glow discharge. The transient changes in reflectivity and transmission are studied as a function of wavelength, carrier density and alloy composition. The results are explained by taking into account hot carrier relaxation in the extended states, trapping into weakly localized bandtail states and thermalization in those bandtail states.

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