Abstract
The effect process between femtosecond laser and matter had been introduced first. Then introduce the theory of strain pulse and the experiment set up.We detect transient reflectivity change on surface of GaAs at different delayed time using femtosecond transient reflection spectroscopy.We found it was made up of three parts: original scattering process of 100fs, carriers-lattice thermal equilibrium of 1.5ps and recombination process of 500ps.
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