Abstract
The ultrafast relaxation dynamics of split-off holes in GaAs are studied using a time-resolved two-wavelength excitation luminescence technique. Following valence-to-conduction-band transitions that are excited by near-infrared femtosecond pulses, delayed midinfrared femtosecond pulses are used to promote holes from the heavy-hole band to the split-off-hole band. The subsequent conduction-to-split-off-hole luminescence indicates that the room-temperature lifetime of split-off holes in GaAs is approximately 50 fs. The accompanying changes in conduction-to-heavy-hole-and-light-hole luminescence when holes are transferred to the split-off band are also observed.
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