Abstract

In this review the interaction between femtosecond laser and matter with emphasis on silicon and some metals have been appraised. For silicon, spikes are produced as a result of interaction in the presence of background gas such as SF6, or H2S with an appropriate background pressure, but spikes are not formed in the presence N2 or air. The formation of the spikes increase the infrared light absorption of silicon to near unity. Interaction of femtosecond laser with metals form periodic surface structures that make the metals exhibit many different morphological characteristics. This processing technique allows the creation of a variety of colors on a metal that ultimately lead to control of its optical properties from UV to terahertz. From the assessment made, the potential of femtosecond laser structuring of materials for cost-effective nano-manufacturing is high.

Highlights

  • For almost 50 years scientists have studied the interaction of laser with matter, and over the past several decades progress in precision control of pulse repetition rate and carrier-envelope phase of ultrafast lasers has established a strong and interesting research into materials removal

  • Femtosecond laser ablation is the process of low-threshold-material-removal from surfaces governed by plasma formed at the surface of the material via generation of extreme temperatures and pressures excited via multi-photon absorption

  • Pulsed laser irradiation has produced a variety of periodic micrometer and sub-micrometer scale surface patterns including laser induced periodic surface structures (LIPSS) when irradiated with nanosecond and femtosecond laser pulses (Dolgaev et al, 2001; Fauchet & Siegman, 1982; Her et al, 1998; Her et al, 2000; Pedraza et al, 1999; Rothenberg & Kelly, 1984; Sipe et al, 1983) and with the fluence near the melting threshold

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Summary

Introduction

For almost 50 years scientists have studied the interaction of laser with matter, and over the past several decades progress in precision control of pulse repetition rate and carrier-envelope phase of ultrafast lasers has established a strong and interesting research into materials removal. The electron-lattice relaxation time in metals is 1-10ps (Brorson et al, 1990; Eesley, 1986) and this makes the mechanism of femtosecond laser ablation different from that of longer pulsed laser ablation in metals This allows the local structuring of bulk transparent materials without damage to the bulk. Mazur’s group have reported formation of sharp spikes on a ‘black’ silicon surface without using masks (Her et al, 1998; Kautek & Krueger, 1995) and using masks (Shen et al, 2003) due to irradiation with femtosecond laser pulses in the presence of SF6 or Cl2. This review discusses the latest developments in femtosecond laser structuring with emphasis on sharp spike formation on silicon and structuring on metals It looks at the increased light absorption after structuring of these materials with focus on work done by the Mazur and Guo groups. The paper will be organized in three sections as follows: Section (1) will be introduction, Section (2) will comprise the structure formation and optical properties with Section (3) being summary

Structure Formation and Properties
Silicon
Light Absorption
Structure Formation
Summary

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