Abstract
Femtosecond laser (@1030nm, 280fs) was applied to irradiate SiO2 thin films in the hope of improving damage resistance of films to nanosecond ultraviolet (UV) laser light (@355nm, 4ns). The optical and mechanical properties of laser strengthened SiO2 thin films were characterized and laser-induced damage threshold (LIDT) results show that femtosecond laser irradiation can significantly improve LIDT of the films to nanosecond UV laser light from 5.45J/cm2 to 28.96J/cm2 by a factor of 5. Fluorescence and Fourier Transform Infrared (FTIR) spectra indicate that the LIDT improvement is attributed to the decrease in hydroxyl group's(OH) density in SiO2 thin films resulting from femtosecond laser irradiation.
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