Abstract
We report on a diode laser which is used to pump directly the crystal with a semiconductor saturable absorber allows passive mode locking for the generation of pulses with an average power along with the broadband light by focusing on ultrashort laser pulses into crystal tungstate. The nonuniformity can lead to the crystal and bonding failure. Also model the thermal and structural properties at the various tempeartures to observe the beam quality. Extends the generated spectrum from the infrared to ultraviolet through the visible region, it consists of discrete spatially separated sidebands.
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