Abstract
Single- and multi-shot ablation thresholds of gold films in the thickness range of 31–1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence F th on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot ( N-on-1), bulk damage thresholds of ∼0.7 J cm −2 (1-on-1), 0.5 J cm −2 (10-on-1), 0.4 J cm −2 (100-on-1), 0.25 J cm −2 (1000-on-1), and 0.2 J cm −2 (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of L c ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron–phonon relaxation occurs. L c is by more than an order of magnitude larger than the optical absorption length of α −1 ≈ 12 nm at 793 nm wavelength.
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