Abstract
Focused infrared femtosecond laser pulses (wavelength ∼800nm, emission pulse duration 100fs) were employed to fabricate optoelectronic devices such as waveguides, micro-gratings and laser active centers in LiF crystals. F2 color centers of about 2×1018cm−3 and refractive index change of about 1% at 633nm were induced by the fs-laser irradiation. This technique was applied to fabricate a distributed-feedback (DFB) F2 color center laser structure inside LiF single crystal. The LiF DFB laser exhibited laser oscillation at 707nm at room temperature. The slope efficiency of ∼10% and beam divergence of ∼20mrad were achieved.
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