Abstract
The intersubband relaxation of holes in p-type modulation-doped Si 1− x Ge x /Si multiple quantum wells is studied both experimentally and theoretically. Pump–probe experiments with 150-fs midinfrared pulses yield a lifetime of holes in the second heavy-hole subband of only 250 fs for 4.4-nm wide wells with x=0.5. This short lifetime is caused by interaction with phonons via the optical deformation potential. Calculations of hole–phonon scattering agree very well with the experimental results. The calculations show that longer heavy-hole lifetimes are possible by increasing the Ge content and the well widths.
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