Abstract
We report femtosecond transient reflectivity measurements of as-grown and iron-doped GaxIn1−xAs. A hybrid vertical Bridgman and gradient freezing directional solidification process was employed for the growth of high quality Ga0.69In0.31As:Fe crystals with the uniform impurity doping concentration necessary for high resistivity (1.6×107 Ω cm) and high mobility [(2–3)×103 cm2/V s] material. Carrier lifetimes range from ∼62 fs for as-grown Ga0.09In0.91As to ∼306 fs for Ga0.69In0.31As:Fe. The high carrier mobility along with high resistivity and subpicosecond carrier lifetimes make Ga0.69In0.31As:Fe an excellent candidate for photoconducting antenna based terahertz emitters.
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