Abstract
Pump-probe spectroscopy is used to determine the dynamics of carriers in thin films of Ga0.51In0.49P grown at temperatures of 500, 300, and 200 °C. The carrier trapping time τtr, is found to be ∼0.2 ps for the 200 °C sample and ∼0.9 ps for the 300 °C sample. Annealing of the 200 °C sample at 450 °C for 10 min causes the optical response to slow appreciably (τtr∼0.7 ps), indicating that the point defects are directly responsible for the ultrashort optical response observed in this material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
