Abstract

A terahertz (THz) detector based on thermoelectric thin films was simulated using the finite elements method. The thermoelectric circuit consisted of S b and B i 88 S b 12 150-nm films on the mica substrate. S b , B i 88 S b 12 , and mica-substrate properties have been measured experimentally in the THz frequency range. The model of electromagnetic heating was used in order to estimate possible heating of S b - B i 88 S b 12 contact. THz radiation power varied from 1 μ W to 50 mW, and frequency varied in the range from 0.3 to 0.5 THz. The calculations showed a temperature difference of up to 1 K, voltage up to 0.1 mV, and responsivity of several mVW − 1 . The results show that thin S b and B i − S b thermoelectric films can be used for THz radiation detection at room temperatures.

Highlights

  • Terahertz (THz) devices are of significant importance for such fields as disease diagnostics and medical imaging [1,2,3], security systems [4,5], and sensing and imaging [6]

  • From the point of view of the highest Seebeck coefficient at room temperature and band structure, Bi-Sb thin films potentially can be used as a sensitive element for THz detection

  • Interaction between detector and THz radiation was described by 2 interfaces: (1) electromagnetic heating and (2) heat transfer in solids

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Summary

Introduction

Terahertz (THz) devices are of significant importance for such fields as disease diagnostics and medical imaging [1,2,3], security systems [4,5], and sensing and imaging [6]. TE detectors work on the basis of the Seebeck effect, which generates electric voltage in TE circuits in case of temperature difference between two junctions (hot and cold junctions) of TE materials [8,9]. In 2018 [21], a Seebeck coefficient of Bi 87Sb13 was around 80–110 μV·K−1 with comparatively low thermal conductivity (1.5–3.5 W·m−1 K−1 ) and high electrical conductivity (around 100–300 kS·m−1 ) at room temperatures. From the point of view of the highest Seebeck coefficient at room temperature and band structure, Bi-Sb thin films potentially can be used as a sensitive element for THz detection. Finite elements simulation method showed itself as a reasonable and effective tool for THz antenna modelling, making it possible to combine thermal, electrical, and optical phenomena in one multiphysical model. Such a detector can be potentially used as a pixel of THz imaging system

Mathematical Model
General Equations
Boundary Conditions
Materials
Temperature Distribution Along the Antenna Length
Temperature Difference and Responsivity
Discussion

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