Abstract
Abstract In crystals of compounds MX3 with layer structures, stacking faults are quite common. Assuming close packing for the X atoms, the different types of stacking faults are discussed, including cases in which the M atoms are displaced from the centers of the octahedral voids. Formulae are derived for the calculation of the intensities along the streaks of diffuse scattering. The formulae cover all types of stacking faults when the Reichweite of interaction between layers is s = 1; for s = 2, the cases of hexagonal and cubic close packing of the X atoms are considered.
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