FeGa2O4 nanowires preparation after milling and annealing of Fe doped GaN samples

Abstract

In this work, FeGa2O4 nanowires were prepared using high-energy ball milling and subsequent annealing from GaN samples doped with Fe. The structural and chemical characterization were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), differential scanning calorimetry (DSC-TGA), and transmission electron microscopy (TEM). The XRD patterns showed that GaN samples doped with Fe reach nanocrystalline sizes after the process of high-energy ball milling. The DSC-TGA studies confirmed the GaN thermal decomposition and weight loss of the milled samples. XRD patterns reveal the formation of the FeGa2O4 compound with an fcc crystal lattice in GaN: Fe milled and subsequently annealed at 1100 °C. The TEM analysis of annealed powders showed the formation of FeGa2O4 nanowires with diameters of around 50 to 60 nm and lengths up to 2 μm. High-resolution transmission electron microscopy (HRTEM) images provide additional evidence of the fcc lattice structure of the nanowires. The decomposition of GaN produced FeGa2O4 nanowires since molten Ga at high temperature is combined with the doping element of Fe and then with the O2 in the air.