Abstract

We employ a nonequilibrium energy balance and carrier rate equation model based on microscopic semiconductor theory to describe the quantum-dot (QD) laser dynamics under optical injection and time-delayed feedback. The model goes beyond typical phenomenological approximations of rate equations, such as the α-factor, yet allows for a thorough numerical bifurcation analysis, which would not be possible with the computationally demanding microscopic equations. We find that with QD lasers, independent amplitude and phase dynamics may lead to less complicated scenarios under optical perturbations than predicted by conventional models using the α-factor to describe the carrier-induced refractive index change. For instance, in the short external cavity feedback regime, higher critical feedback strength is actually required to induce instabilities. Generally, the α-factor should only be used when the carrier distribution can follow the QD laser dynamics adiabatically.

Highlights

  • We presented an energy balance and carrier density rate equation model for QD lasers that is derived from a microscopic theory

  • It is applicable to numerical bifurcation analyses of QD lasers subjected to either external optical injection or time-delayed optical feedback

  • We have investigated the differences in the dynamics of QD laser structures arising from using an α-factor, compared to the dynamics predicted from the model with dynamic gain and index changes

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Summary

Microscopically based balance equation model

We consider a change in carrier energy due to electrically pumped carriers (subscript pump), interband recombination processes (rec), Auger-scattering (col), scattering with lattice phonons (phon), and due to the thermalization of the electron and hole distributions toward a common carrier temperature (th) [45]. These contributions are given by the following expressions: pump εp,b,.

Optical perturbations: optical injection and time-delayed optical feedback
Bifurcation analysis
Optical injection
Conclusion
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