Abstract
The results of the experimental investigations of the reverse current-voltage characteristics of the Mo/n-n+-Si Schottky structures are presented. The structures were irradiated by γ-rays 60Со, the cumulative doses were equal to 0, 10, and 100 kGy. The investigation has been carried out in the temperature range 120–330 К and for the ultrasound loading condition (vibration frequency was 9.6 MHz, intensity of the longitudinal wave was up to 1.3 W/cm2). It was established that the main charge transport mechanisms are the thermionic emission, the direct tunneling through deep center and the tunneling stimulated by phonons; the contribution of the last one appeared after irradiation only. For the first time the acousto-stimulated reversible increase of the reverse current has been revealed. The possibility of a creation of a γ-irradiation sensor based on this effect was considered. It was shown that effect’s features can be explained by an ionization of the interface defects due to an interaction between ultrasound and dislocations or point radiation defects in the non-irradiated or irradiated structures respectively.
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