Features of the plasma sputtering of polycrystalline Pb1 − x Sn x S films

Abstract

The processes of the sputtering and modification of surfaces of polycrystalline films of the ternary solid solution Pb1 − xSnxS (x = 0.9–1.0) in a high-density Ar plasma of high-frequency low-pressure inductive discharge are studied. Films with thicknesses of 1–4 μm are grown on glass substrates using the “hot-wall” method and consist of plate-like crystallites. It is established that the sputtering rate for lead-tin sulfide films does not exceed 2.0 nm/s, which is determined by the presence of oxygen-containing compounds on the surfaces. In the case of plate-like crystallites with nanodimensional thicknesses, the effect of smoothing of the developed surfaces of the polycrystalline Pb1 − xSnxS layers during plasma treatment is observed; this is important for fabricating multilayer device structures.