Abstract
The influence of the introduction of graphene oxide (GO) particles on the low-temperature conductivity of composite films based on organometallic perovskites CH3NH3PbBr3 with GO particles with a concentration of 0-5 wt.% has been studied. It has been established that the introduction of GO particles into ITO/CH3NH3PbBr3 : GO/ITO/glass films manifests itself in a decrease in the activation energy of the temperature dependence of the conductance. A sharp increase by 5-6 orders of magnitude of the resistance of the films at temperatures below 150 K was found. It is assumed that in the studied CH3NH3PbBr3 : GO systems at T>150 K, the hopping mechanism of transport predominates, associated with the capture and accumulation of charge carriers in GO particles, and the increase in resistance at T<150 K may be due to the structural phase transition characteristic of organometallic perovskites in this temperature range. Keywords: organometallic perovskites, graphene oxide, electrical conductivity, low-temperature transport.
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