Features of the Initial Growth Stages of ZnO Films on the Rhombohedral Plane of Sapphire

Abstract

The initial growth stages of (11$$\bar {2}$$0) ZnO films on the rhombohedral plane of sapphire are studied. Grains of parasitic orientations are found to form at early growth stages. The pre-growth annealing of sapphire substrates at temperatures above 1000°C results in suppression of the growth of these grains. The presence of round and polygonal grains in (11$$\bar {2}$$0) ZnO films is explained from the standpoint of the cluster-growth mechanism.