Features of the Formation of Conductive Channels in Memristors Based on Solid Electrolytes

Abstract

Experimental data were obtained on measuring the resistance and electrical conductivity in the low-resistance mode of operation of a memristor based on germanium selenide with a self-forming conductive channel in the form of a silver filament in the range of operating frequencies and temperatures. In the frequency experiment, the influence of the switching frequency was carried out at room temperature in the range of 1—10,000 Hz. The main result of the experiment was the identification in sem-ilogarithmic coordinates of a linear interdependence between the magnitude of the electrical conductivity and the operating cycle time of the memristor, which made it possible to introduce a temperature-dependent kinetic constant. This experimental fact made it possible to establish the main parameter that affects the shape of the I—V characteristic, the thickness of the conductive channel.