Abstract

Raman spectra of irradiated with fast neutrons or MeV ion-implanted radiation-damaged natural and CVD diamonds and chemically purified detonation nanodiamonds are investigated. The influence of radiation damage level and effects of high-temperature annealing on the intensity and spectral shape of the 1640 cm−1 band is studied. It is shown that in radiation-damaged diamonds this band consists of at least six Gaussian peaks, the intensity of which varies one to one both with the level of radiation disordering and the temperature of the subsequent annealing. The “1640” band in radiation-damaged diamonds is completely annealed at temperatures above 1000 °C, while in detonation nanodiamonds annealing up to 1200 °C does not significantly affect its shape and intensity.

Highlights

  • Understanding and controlling radiation-induced defects is a key to optical and semiconductor applications in which diamond is subjected to irradiation during processing to tailor its properties

  • The characteristic Raman spectra of radiation-modified and detonation nanodiamonds (DND) diamonds are very similar in spectral shape (figure 1(a))

  • (b) Raman spectra of CVD diamond irradiated with neutrons with Φ = 2×1019 cm−2 before (5) and after annealing at 800 °C (6), natural diamond implanted with 335 MeV Ni ions, NV = 1023 cm−3 (7)

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Summary

Introduction

Understanding and controlling radiation-induced defects is a key to optical and semiconductor applications in which diamond is subjected to irradiation during processing to tailor its properties. The band with a maximum near 1640 cm−1 dominates normally in the high-frequency part of the Raman spectra of radiation-modified diamonds and of ultrafine detonation nanodiamonds (DND) [1]. This feature cannot be assigned to any pure form of sp3-carbon [2]. In this work we investigated the behavior of the “1640” Raman band during annealing runs with the aim to advance in understanding the nature of centers responsible for this band in radiation-modified and ultradispersed diamonds. Published under licence by IOP Publishing Ltd doi:10.1088/1742-6596/1400/4/044017

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