Abstract
Nanoscale organic-inorganic films were grown using the sol-gel technology and were used as advanced sources of boron and gadolinium diffusion into silicon. Features of boron depth profiles in the case of its separate diffusion and simultaneous diffusion with gadolinium from grown films were studied by secondary ion mass spectrometry. A program was developed and numerical simulation was performed, which provided adequate description of complex portions of experimentally measured boron diffusion profiles. A model was proposed, which considers the boron redistribution between the glassy film and oxide layer. This model allowed determination of the optimum boron diffusivities providing the best agreement between experimental and calculated results.
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