Abstract
Characteristics of crystal doping with electrically active impurities by the thermomigration method for two− and three−component liquid zones in comparison with diffusion alloying (for the example of silicon) have been analyzed. We have found that the concentration range of doping for the two− component migration zone is much narrower than the range of diffusion doping. Introduction of a third component into the liquid phase allows extending the range of doping thermomigration to values exceeding the diffusion doping range for the same impurity. For silicon crystals this technological advantage of thermomigration is achieved with the use of three zones, GaxAl1−xSi and SnxAl1−xSi. We show that the speed of crystal doping by the thermomigration method in technologically relevant situations is by orders of magnitude higher than that of diffusion alloying. Thermomigration doped layers with steadily moving liquid zones have higher structural perfection than diffusion doped layers. We show that the thermomigration alloying method can be used in the technology of semiconductor device structures, provided that their planar dimensions and thickness are tens micrometers or more. Quantitative results obtained for the example of liquid zone migration in silicon, but the features of thermomigration as a doping method are true for other semiconductor materials.
Highlights
Characteristics of crystal doping with electrically active impurities by the thermomigration method for two− and three−component liquid zones in comparison with diffusion alloying have been analyzed
We have found that the concentration range of doping for the two− component migration zone is much narrower than the range of diffusion doping
We show that the speed of crystal doping by the thermomigration method in technologically relevant situations is by orders of magnitude higher than that of diffusion alloying
Summary
Рассмотрены особенности легирования кристаллов электрически активными примесями методом термомиграции (ТМ) двух− и трехкомпонентных жидких зон в сравнении с диффузионным легированием (на примере кремния). Применительно к кристаллам кремния указанная технологическая особенность метода ТМ обеспечивается при использовании трехкомпонентных зон GaxAl1−xSi и SnxAl1−xSi. Показано, что скорость легирования кристаллов методом ТМ в технологически значимых ситуациях на порядки превышает скорость легирования диффузией. Что легирование методом ТМ может быть реализовано в технологии получения полупроводниковых приборных структур при условии, что их планарные размеры и толщины составляют десятки микрометров и более. Композиция «кристалл—жидкая зона—перекристаллизованная область— кристалл» (а); примеры применения плоской зоны (б) и линейных зон (в): 1 — жидкая зона; 2 — кристалл — источник ростового вещества; 3 — перекристаллизованная область; 4 — кристалл− затравка; 5 — места входа линейных зон в кристалл 2; G — градиент температуры в твердой фазе
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