Features of polyatomic ion emission under sputtering of a silicon single crystal by Au m− cluster ions

Abstract

Comparative studies of the emission of secondary cluster Si n + ions ( n=1–11) and polyatomic Si n X l Y k + ions (X, Y are Au, B, C, N), as well as doubly charged Si 2+ ions under bombardment of single crystalline silicon by cluster Au m − ( m=1–5) ions with energy E 0=4–18 keV have been carried out. High non-additivity enhancement of the yield of the Si n + ions and most polyatomic ones has been observed with an increase of the number of atoms in the projectiles. For Si 2+ ions the negative non-additive effect has been observed. The increase in the yield of impurity-containing cluster Si n X + ions allows for an increase by a factor of 100–1000 for the sensitivity of the SIMS analysis of the Au, B, C, N impurities in Si with the use of cluster ions as primary and secondary ones.