Abstract
Low-energy (50–200 eV) He and Ar ion irradiation of on Si/SiO2-based nanoporous materials is modeled with the use of the molecular dynamics method. The obtained results corroborate the experimentally observed effect of densification of near-surface layers of materials with small-size pores and low porosity due to the ion-induced pore collapse process. The differences in the He and Ar ion irradiation of nanoporous materials and the influence of ion energy on the intensity of structural changes are studied.
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