Abstract
The results of an experimental study of silicon solar cells operating under conditions of dynamic ultrasonic loading are presented. Based on an analysis of current-voltage characteristics, the dependences of the shortcircuit current, opencircuit voltage, maxi mum output power, shunt resistance, reverse current, and breakdown voltage on the strain caused by acoustic waves of various frequencies are studied. Possible mechanisms of the acoustic effect are analyzed. In particular, acoustically induced transformation of recom� bination centers (e.g., BSO2i complexes) and ionization of levels associated with extended defects in the p-n junction region are considered.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
