Abstract
In μc-Si:H/a-Si:H superlattices, using time-of-flight (TOF), photo and equilibrium charge carrier extraction by linearly increasing voltage (CELIV) methods the mobility, bulk conductivity, equilibrium carrier density and recombination transients have been investigated. It was obtained that the interfaces between μc-Si:H and a-Si:H layers have no influence on charge carrier transport, and the conductivity, equilibrium charge carrier density and lifetime of such superlattice are substantially higher than those of a single a-Si:H layer. Obtained experimental results are promising for application of μc-Si:H/a-Si:H superlattices in solar energetics. The superlattice consisting of approximately 80 % of microcrystalline substance is optimal for these purposes.
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