FEATURES INTERFACIAL INTERACTION IN Si-SiO2 STRUCTURES

Abstract

The Si/SiO2 boundary interphase is a source of internal mechanical stresses, localized charges and points defects. It cause the unstability of electrical parameters of Si-SiO2 instrument structure. However, in sprite of the great importance of the problem, today we do not have appropriate model of interphase interaction and numerical data of it energy parameters. The aim is to develop the model of interphase interaction for numerical calculation of energy parameter within Si/SiO2 boundary: interfacial energy . ѓБm, interfacial tension . ѓРm. To conduct the investigation of such parameters under influence of external factors to predict the changes in these parameters for formation of thermo stable structures. Base on equations of nonequilibrium thermodynamics and surface physics of Si-SiO2 solid-state structures the energy parameters of interphase interaction on Si-SiO2 boundary: interfacial energy . ѓБm, interfacial tension . ѓРm were calculated. For the firs time those parameters were evaluated: ѓБm = 4,56 J/m2 „„„p ѓРm = 5,0 N/m. It was shown that energy parameters is significantly higher in investigated structure (Si-SiO2) in compare with ЃgSi-„}„u„„„p„|„y (Cu,Al,Au,Cr)Ѓh (ѓБm: 0,27; 0,8; 0,12; 0,31 J/m2, ѓРm: 0,61; 0,10; 0,37; 0,75 N/m) „„„p ЃgCu-SiO2Ѓh (ѓБm: 0,1 J/m2, ѓРm: 0,11 N/m).The influence of temperature and X-rays on such parameter was investigated. In the range of X-rays absorbed dose (8.101-102 Gray) the transition in equilibrium was found. It characterized with minimum interphase energy. The correlation with mechanical tension in structure and interphase tension in Si-SiO2 were established. The analyses of investigated energy parameters can be used for prediction of interphase interaction in choice of thermodynamically stable contacting boundary structures with pre-defined parameters of interphase interaction and mechanical tension.