Abstract
Liquid phase epitaxy (LPE) has been applied for growing mainly semiconductor materials [1, 2]. It may be required, when electrical and crystallographic quality of wafers which are cut from bulk crystals is not good enough for making active devices directly on wafers, to grow same materials as substrates but better quality on wafers (homoepitaxy). Epitaxial growth can be also applied for making stacked multi-layer structures of several layers for such as integrated circuits or solar cells. In order to combine more than two different materials heteroepitaxy can be performed. Much efforts are made recently, using LPE techniques, to grow crystalline semiconductor layers on cheap substrates, ceramics or glass, for aiming to fabricate solar cells with higher energy conversion efficiency.
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