Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography

Abstract

This paper describes the feasibility of lOOnm-node lithography using ArF lithography and att-PSM (aUenuated Phase Shift Mask). In the simulation approach, we can find that att-PSM can improve EL window more than 25%compared to BIM (Binary Intensity Mask) in both KrF and ArF lithography. Although the MEF (Mask Error Factor) values of att-PSM and BIM are almost same even in a higher NA region, the total CD variation of aU-PSM is slightly lower than that of BIM because of the increase effect of EL window. Considering the total CD variation, it is necessary to use the ArF lithography machine with higher NA of more than O.7ONA for lOOnm patterning. In the real patterning performance, the ArF lithography and att-PSM can improve EL windows more than 60% in comparison with KrF lithography and att-PSM for sub-l2Onm cell patterns. The case of att-PSM and annular aperture condition, especially small ring width annular condition shows the increasing effect ofprocess windows compared to BIM for lOOnm L/S patterns. For the direct C/H printing below l2Onm feature, we can get about 9% EL window in the case of l2Onm C/H feature. Although we have some technical issues for lOOnm lithography such as the controllability of MEF and EL window extension, the lens quality enhancement for the higher NA and manufacturing defects of att-PSM, etc., there is a sufficient feasibility to obtain lOOnm-node pattern with ArF lithography and att-PSM.