Abstract
An in situ detection method for the dielectric breakdown of oxide films for MOS gates has been required in the plasma etching process. In this feasibility study, a conventional MOSFET device is used and an acoustic emission (AE) method is employed for the detection of the dielectric breakdown of a gate oxide film. A thin type AE sensor is attached at the backside of an electrostatic chuck (ESC), and the dielectric breakdown in a MOSFET, which is set on the ESC, is detected. The results demonstrate that the thin type AE sensor can detect the dielectric breakdown with an energy on the order of µJ.
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