Abstract
High-Voltage CMOS (HVCMOS) sensors, featuring a deep n-well separating the transistors and the depletion region, are intrinsically radiation hard and a good candidate for tracking systems in future high energy physics experiments. In hope of reducing the power density and incorporating more functionality in the same area, we are looking for foundries where HVCMOS sensors can be implemented in smaller feature size. In this paper we report the feasibility study in two MPWs using 55 nm processes. Sensor diodes are designed with deep n-well serving as electrode in Low-Leakage process, and the test results are reported. Design and first results for MPW in 55 nm HVCMOS process will also be described.
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