Abstract
In this work, we investigated the film growth and planarization properties of sequential polymerization initiated chemical vapor deposition method (SP-iCVD). Supersaturated concentration of monomer and small amount of initiator were introduced sequentially into chamber. The obtained film properties such as uniformity, polymer molecular weight and thermal stability were same or better than iCVD processed film. Additionally, good planarization of high aspect ratio (7:1) patterned wafer was demonstrated in SP-iCVD. The overburden from top of feature was within 20nm and film thickness between isolated and dense feature areas was very uniform in this single-step process.
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