Abstract
Three-dimensional (3-D) finite element models have been utilized to simulate electromagnetic behaviors in spin-tunneling random access memory (STram). The most significant contributors have been identified. Compared with conventional current-in-plane (CIP) giant magneto-resistive (GMR) memory, whose signal level is inversely proportional to the square root of the storage density, these current-perpendicular-to-plane (CPP) STram elements provide an excellent readout property in that their signal level is independent of their cross-section area. This result is so attractive that the density of STram should not be limited by signal degradation. Moreover, a magnetic flux closure design was found to reduce the crossfeed by about a factor of five, compared with conventional keeperless design, which is the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density. Although the storage mechanism described in this paper is made of STram, the flux-closure design could be generally applicable to other magnetic solid state memories.
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