Abstract
Ce-doped CaGa 2S 4 and SrGa 2S 4 thin films were prepared for the first time by the flash evaporation method. The films were characterized before and after annealing in H 2S(10%)+Ar gas stream by measuring photoluminescence and absorption spectra, X-ray diffraction and electron probe micro analyses. X-ray diffraction curves and absorption spectra before annealing show amorphous behaviour, whereas the annealing leads to a significant crystallization and improves the stoichiometry of the films. Based on the performance data obtained from dispersive type EL cells using CaGa 2S 4:Eu powder together with photoluminescence property comparison between CaGa 2S 4:Eu and CaGa 2S 4:Ce powders, the annealed films prepared by flash evaporation can be considered to become one of the candidates for TFEL flat panel devices.
Published Version
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