Abstract
Tunneling rate due to electron–phonon interaction is calculated for a double quantum well structure. A significant negative differential conductance is expected because of the resonant behavior of longitudinal optical phonons. The results show that a negative differential conductance of up to 0.3 Ω−1 can be achieved. Based on this result, a new class of the devices that use the phonon-assisted tunneling as an operating principle is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
