Abstract
Tunneling rate due to electron–phonon interaction is calculated for a double quantum well structure. A significant negative differential conductance is expected because of the resonant behavior of longitudinal optical phonons. The results show that a negative differential conductance of up to 0.3 Ω−1 can be achieved. Based on this result, a new class of the devices that use the phonon-assisted tunneling as an operating principle is proposed.
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