Abstract
FEA modeling of a thermally-excited silicon beam resonant pressure sensor is presented. The sensor consists of two bonded silicon chips, one with an etched beam and another with an etched diaphragm. FEA modeling is carried out on temperature distribution, resonant frequency shift due to thermal stress, effect of heater/detector elements on the natural resonance frequency, design of diaphragm geometry, and sensitivity of pressure measurement. The resonant pressure sensor samples are realized by silicon micromachining are measured. There is a satisfactory agreement between theory and experiments.
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