Abstract
Fe films of up to 10 ML thickness were grown on cleaved GaAs(110) in a two-step process that associates low-temperature deposition at 130K with a subsequent annealing to room temperature. Low-energy electron diffraction, scanning tunneling microscopy, and in situ magneto-optical Kerr effect were combined to study these films. The observed magnetic and structural properties are distinctly different from the characteristics of conventionally grown Fe films on GaAs. We found no indication of interface compound formation. The applied two-step growth process is a promising technique to further increase spin-injection and detection efficiencies of Fe∕GaAs hybrid structures.
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