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Abstract
Fe-doping of GaN layers of 3in. in diameter and a thickness of 1mm in a vertical AIX-HVPE reactor is studied. Ferrocen was used as Fe source. It is shown that a sufficient uniformity of growth conditions, a high purity of undoped GaN layers, and a moderate Fe incorporation of 2×1018cm−3 allow for growth of semi-insulating GaN layers with a sufficiently high specific resistivity even at elevated temperature. This makes the material suitable as substrate for electronic power devices at high power or in harsh ambient.
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