Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications

Abstract

High-temperature capable transistors are of great interest for industrial applications, for instance, oil & gas and geothermal exploration, avionic, space, automotive and energy conversion. Especially, energy conversion electronics using wide-bandgap power transistors, i.e. SiC- or GaN-based FET, in combination with high-temperature silicon gate-driver circuits can significantly increase system efficiency and reduce costs. Our improved planar virtually dopant-free silicon-based double gate SOI FET with reactively sputtered WTiNx front-gate electrodes demonstrates ultra-low drain leakage currents at high-temperatures opening a path to record operating temperatures for silicon-based FET devices.