Abstract
The crystallography and microstructure of epitaxial dysprosium silicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at $750\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ have a compact three-dimensional shape and are identified as hexagonal $\mathrm{Dy}{\mathrm{Si}}_{2}$. Islands grown at $650\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal $\mathrm{Dy}{\mathrm{Si}}_{2}$. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.
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