Abstract

The new energy system with low environmental load will more and more reflect its superiority in urban design and planning. The state monitoring of power electronic devices used for power conversion in new energy system is of great significance to the stable operation of the whole city. The failure mechanism and aging evolution process of IGBT modules are studied, and the failure types of IGBT devices are judged. An algorithm based on the thermal sensitive electrical parameter method and thermal resistance network method was proposed to identify aging types. Firstly, a healthy junction temperature model of IGBT based on the initial loss of turn-off was established in the double-pulse platform based on experimental data. Secondly, a thermal resistance network model of IGBT was established based on the datasheet. Finally, the accelerated aging of IGBT was carried out through the existing accelerated aging experimental platform of IGBT in the laboratory, and the aging parameters were imported into the above two models. The results show that the output results of the thermal resistance network model and the thermal parameter model are affected by the aging type, which provides a new solution for the aging type research of IGBT, and is of great value for the application of new energy system.

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