Abstract
New generation infra-red (IR) microscopy has been integrated with lock-in capability. The introduction of this function greatly improves the usability of this tool for fault localization. It is very useful in localizing defects that produce a heat source that is usually caused by metallization short or active damage. This paper presents three case studies to highlight the importance of using infra-red lock-in thermography (IR-LIT) as a fault localization tool. The results are compared to other techniques such as photon emission microscopy (PEM), thermal-induced voltage alteration (TIVA), and superconducting quantum interface device (SQUID), to present the role and advantages of IR-LIT in fault localization.
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