Abstract
Conventional localization techniques such as photoemission microscopy (EMMI) or liquid crystal thermography (LCT) sometimes fail when applied to power semiconductor devices. Thermally induced voltage alteration (TIVA) is a good supplement to overcome difficulties which arise from high voltage (HV) in case of LCT. Missing transparency of the sample/missing photoemission are typical problems occurring during EMMI performed at power devices. In this paper case studies will be shown using a newly developed HV setup for TIVA which point out these advantages.
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