Abstract
This study is about fault detection in siliconbased MEMS resonators. The main idea in finding out the failure is to establish a proper relationship between the mechanical structure and its electrical equivalent and prosecuting related measurements. In order to determine the type of defect, the electrical equivalent circuit is referenced considering the parasitic effects. Among various possible faults cracks in the beam and particle adhesion are selected to verify the validity of the approach. Simulations are carried out to study the effect of defects on the resonance frequency and amplitude. Results coincide greatly with those of similar investigations giving motivation for further studies to penetrate deep into the matter, thus not being restricted with defining the trouble, but even locate the failure
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