Abstract
We deposited an RuO2/Pb(Zr0.40Ti0.60)O3/RuO2 capacitor by metalorganic chemical vapor deposition. RuO2 and Pb(Zr0.40Ti0.60)O3 films were prepared at 350, 395, and 445 °C from respective Ru(C7H11)(C7H9)–O2 and Pb(C11H19O2)2–Zr(O⋅t-C4H9)4–Ti(O⋅i-C3H7)4–O2 systems. Good ferroelectricity was observed for PZT films deposited at 445 °C but not at 395 °C. However, we obtained ferroelectricity with a remanent polarization above 30 μC/cm2 by inserting a 10-nm-thick sputtered-Pt layer between the PZT and RuO2 bottom electrodes, which improved the crystallinity of PZT films even those deposited at 395 °C. This capacitor had hardly any fatigue after 1×1010 switching cycles. This demonstrates the possibility of preparing fatigue-free capacitor all deposited below 400 °C for high-density ferroelectric random-access memory applications.
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