Fast‐Response Inverter Arrays Built on Wafer‐Scale MoS2 by Atomic Layer Deposition

Abstract

The wafer‐scale integration of the downscaled devices such as transistors based on two‐dimensional (2D) transition metal dichalcogenide (TMD) has attracted great attention in recent years. Such integration is also a significant step towards the system‐level application of these novel low‐dimensional semiconductors. Yet, so far, functional logic circuits based on the 2D TMDs have rarely been reported, largely because of the absence of an effective approach for large‐scale TMD synthesis and the unsatisfactory elementary logic cell performance. In this work, n‐type inverter (NOT gate circuit) arrays have been fabricated based on a wafer‐scale 2D molybdenum disulfide (MoS2) thin film which is grown by atomic layer deposition (ALD). High‐quality crystallinity and excellent wafer‐level uniformity have been successfully achieved. The n‐type inverter array exhibits a fast response with 50 Hz inverse‐frequency. The impact of the device geometry on the inverter performance has also been characterized by designing various width ratio between the load and pull‐down transistors. These results open up an attractive approach to realize the practical application of wafer‐scale 2D MoS2 in logic and circuit systems.