Abstract
For fast growth of 6H-SiC single crystals, a physical vapor transport (PVT) technique with two crucibles is proposed herein. By providing the growth chamber with a small continuous flux of Si vapor, the growth rate is enhanced by three times over the conventional PVT technique. The utilization ratio of the raw material is also improved. Energy dispersive analysis of X-rays (EDAX) shows that the Si content of the grown crystal is the same as that of the seed crystal. Scanning electron microscopy (SEM) indicates that, compared with conventional techniques, fewer micropipes are created in crystals grown by the technique using two crucibles.
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