Abstract
This study investigates the applicability of parallelly connected SiC MOSFETs to high voltage, high input current, and fast transient modulator. The behavior of the proposed approach was tested experimentally on a 650W prototype. The SiC MOSFET transistors were operated at nominal voltage of 840V and current of 800A. The modulator was loaded by a 30kV magnetron. Rise and fall times obtained at the magnetron were below 200nsec. The results of the present study show that the proposed approach can be a good engineering choice for high voltage and high current applications where very fast transition times are required.
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